advanced switching diode ASD355-N silicon epitaxial planar type features small surface mounting ty pe high reliability high speed ( t rr < 4 ns ) mechanical dat a case : mol ded plastic, jed ec sod -323 termi nals : solder plated, solderable per mil-st d-750, method 2026 pol arity : indicated by cat hode band mounti ng position : any weight : 0.000159 ounce, 0.0045 gram maximum ratings (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit repetitive peak reverse voltage v rrm 100 v peak forward surge current t p < 1s i fsm 500.0 ma average forward current v r = 0 i fav 100 ma power dissipation p v 350 mw junction temperature t j 175 o c storage temperature t stg -55 +175 o c f o r m o s a m s electrical characteristics (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit forward voltage i f = 10ma v f 1.2 v v r = 25v i r 100 na v r = 25v , t j = 150 o c i r 50 ua v r = 80v i r 30 ua breakdown current i r = 100ua , t p /t = 0.01 t p = 0.3ms v (br) 100 v diode capacitance v r = 0 , f = 1mhz , v hf = 50mv c d 4.0 pf thermal resistance junction to ambient r th ja k/mw reverse recovery time i f =10ma, v r =6v, i rr = 0.1 x i r , r l =100 ohm t rr 4 ns reverse current sod-323 0.106 (2.7) 0.090 (2.3) 0.012(0.3) typ. 0.053 (1.35) 0.045 (1.15) 0.035 (0.9) 0.028 (0.7) r0.5 (0.02) typ.
rating and characteristic curves (ASD355-N) 10 100 1000 fig.3 - typical reverse characteristics r e v e r s e c u r r e n t , ( n a ) 1 10 100 1 tj=25 c reverse voltage 1.0 10 0.1 100 1000 fig.1-typical forward characteristics i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( m a ) forward volt age,(v) pulse width 300us 1% duty cycle 0 .4 .8 1.2 1.6 2.0 tj=25 c fig.2 - typical diode cap acitance reverse voltage,(v) d i o d e c a p a c i t a n c e , ( p f ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1 10 100 1000 scattering limit scattering limit fig.4 - reverse current vs junction temperature 0 100 200 3 10 2 10 r e v e r s e c u r r e n t , ( u a ) 10 1 -1 10 -2 10 o junction temperature ( c) v =80 v / m ax. va lue s r v =8 0v / ty p . v a lu e s r v =2 5v / ty p . v a lu e s r
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